Space charge fields created by UV laser illumination - click to see Read/Write Head Schematic

First Generation 1.2 Petabyte Spintronics 3.5 Disk Drive


Colossal Storage has exclusively licensed two U.S. Patents, # 6,028,835 2/22/00 Delphion and # 6,046,973 4/4/00 Delphion , for An Integrated Read/Write Head Using Non-contact UV/Deep Blue Laser for Ferroelectric (Multiferroic) High-K Dielectric Ceramic Optical Media.

What some of the over World's Top Post Doctoral PhD's Scientist at MIT, GIT, Purdue, Harvard, Yale, Calpoly, UF, UT, UCB, UCLA, USC, UCSD, NYU, Los Alamos, ORNL, LLNL, Sandia Labs, JPL, Fermi, CERN, Max Plank Institute, Russian Academy of Science, Oxford, Cambridge, Imperial College, IIT, Osaka University, Chinese Academy of Science, and many other colleges and universities are saying about their desire to be part of the Colossal Storage Research Team .

Visit this website for the latest news on many topics. Welcome to P2PNET.net - The original daily p2p and digital news site. Always First!.

The nanoelectric molecule switches at Nanosecond Speeds and has been slowed down considerably to allow the viewer a chance to see the molecule in action.

The US Patent office says Michael E. Thomas is the first person in USPTO history to teach the art of a Non-Contact optical tuning method using photon induced electric field poling of a ferroelectric molecule used as an " Atomic / Photonic / Quantum Switch ", i.e., no prior patents. Thomas' patents expire in 2020.

Normally the 1.3 to 5 nanometer molecule can switch at < 10 picoseconds while maintaining non-destructive readout of ferroelectric bistable properties at a 5 nanometer cell size.

Ferroelectric densities of .2 to .5 Petabits = 200 to 500 Terabits sq. in. / 40 Petabits = 40,000 to 100 Petabits = 100,000 Terabits cu.cm. or 200,000 to 500,000 Gigabits sq.in. / 40,000,000 to 100,000,000 Gigabits cu.cm. with symmetrical read / write times of < 10 picoseconds for 100 year non-volatile storage having infinite rewrites.

Ferroelectrics space age material that has been shown to have robust Nuclear / EMF / Cosmic radiation protection exceeding all other materials used in data storage and display technology.

This is not the end by any means as Tohoku says their target is 4 Petabits a sq. in or 375,000 Terabits cu. cm. using a .4 nanometer cell size.

Colossal Storage will not use complex wiring schemes that have impedance, heat, and reliability problems but instead will exceed any storage devices proposed and would enable a storage density of more than 100,000 terabits per cubic centimeter. A ferroelectric storage drive device the size of an iPod nano or 3.5 inch drive could hold enough MP3 music to play for 300,000 years without repeating a song or enough DVD quality video to play movies for 10,000 years without repetition.

Colossal Storage wants its Rewritable 3D Volume Atomic Holographic Removable Optical Storage NanoTechnology to be an " ALL IN ONE " Storage Solution replacing Ram Drives, WORM Drives,Ovonic Drives, Flash Drives, 2D Optical Drives(phase change/MO DVD), Video Disk Drives, iVTR Drives, Blu-Ray, EVD, Tape Drives, AFM/ATF and Hard Drives for " ALL IN ONE " complete hardware storage solution.

DATA EXPLOSION ! 5 Exabytes in 2003 of new data use to be the model but last year there was 160 Exabytes of new data. The first part 2010 is expected to see 600 Exabytes of new data with end of 2010 about 1 Zettabyte of new data and growing ! Present day data storage technology is lagging behind and it will start to impact internet performance.

Intels new Teraflop MPU needs data storage that can do Tera and Peta data transfer with Tera and Peta data storage. NO other product NOW or on the drawing board can fulfill this mission, Only Colossal Storage.

IBM of late has made a move into spintronic atomic storage with IBM's Parkins new approach, referred to as "racetrack memory". Its interesting to note that pancake motors, electric field generators, etc. all use the concept of creating strong EMF fields by subatomic particles moving through serial wires. Not only will there be increased EMF, heat and energy needs of the device but when the wire develops an open in any wire there goes the memory device. High stray EMF magnetic fields could also pose a health problem to users as well as other electronics in the circuit. How does IBM propose handling the EMF crosstalk between wires possibly effecting neighboring wires data ? These and many other question need to be answered before this technology can be said to be reliable holding a customers data.

The gifs on the page are very basic schematics showing the Theory of the World's First and Only Concept Created by Michael E. Thomas'   of a Non-Contact UV/Deep Blue Laser Photon Induced Electric Field Poling of the Ferroelectric Molecule .

The UV laser diodes and electric field transducers of the Integrated Read/Write Head can be used in any combination or sequence to control the molecules which include UV/blue photon frequencies and quantum energy level as well as Nano/Micro electro static field strength (voltage) and switching field densities (frequency). A Floating Gate Mosfet is used to read data.

The possibility of quantum interference using qubits is a definite possibility having spintronic entangled particle ghost backup data. Allowing the possibility of having more than one computer accessing the same storage device at the same time increasing bandwidths to commonly shared data storage.

An Atomic / Photonic / Molecular / Quantum / Spintronic / Holographic Switch is the method of using a UV laser atom nanoparticle optical switch defined by a non-contact terahertz nano/microwave electric field modulator using attosecond, femtosecond, and terahertz UV photons (electromagnetic radiation, popular inversion) simultaneously to alter properties of ferroelectric molecules for data and light expression. Through the use of UV photon induced electric field poling and dynamically changing the internal geometry of individual ferroelectric atoms in a 3 dimensional optical crystal coated on a high / low velocity substrate.

Michael E. Thomas Invented and Patented the "Theory of Photon Induced Electric Field Poling" in 1998. Since then many colleges, universities, and online reference sources around 2006 like Wikipedia have now included his theory in their teaching and publications.

Using photons which are quantitized packets of polarized electrostatic and electromagnetic energy offers an interface to controlling and understanding electron spin and molecular matter with the possibilites of modifying the geometric structure of a molecule.

In all of the discussions, PZT is shown for simplicity of presentation but it is assumed all other organic/inorganic high-k dielectric sol-gels, polymer, ceramic, metals, rare earth manganites and crystalline multiferroic - ferroelectric molecular materials , i.e., lithium niobate , lithium tantalate, PLZT, PZTN, BST, SBT, LBS, VO2, KTP, KTaO3, RTP, GeTe, BaSr2/FeMoO6KNb03, SrRuO3, SrRuO7, BaTi03, BaMgF4, PbTiO3, PbTiO4, LiNbO2, BBO, LBO, LiNbO3, Fe doped LiNbO3,SrTiO3, SrRuO3, SrCuO2, SBN, KNSBN, BGO, BSO, LiCoPO4, LiI03, LiTaO3, LSMO, BiMnO3 (BMO), LaSrMn, LuFe2O4, CdCr2S4, TbMn2O5, GdMnO3, TbMnO3 PMN–PT, Bi2TeO5, BiFeO3 (BFO),PbZrO3, Pb5Ge3O11, PbZrTiO3, BaSrTiO3, LaMnO3, LaBaMnO3, LaCaMnO3, LaBiMnO3, CaMnO3, CaSiO3, CeMnO3, MgSiO3, YMnO3, LaGaSiO , LGS, Ge2Sb2Te5, InAgSbTe, TbMnO3, KDP, KDP ,KD*P, CCTO, CdCTO, ADP, SASD, LAP, BBT, BBN, BBT1, ABMO, ABTO, Urea, POM, TGS, ORE Minerals, ferroelectric polymer "polyvinylidene fluoride" (PVDF), PMMA, lead germanate like lead telluride PbTe and lead selenide PbSe, CdZnTe (Zinc Cadmium Telluride), Zinc Oxide, ZnO4-Bromo-4'-Methoxyacetophenone Azine, alexandrite, chalcogenide , antimony telluride ( Sb2Te3 ) and many other III-V, II-VI, IV-VI, transistion metal and ceramic semiconductor materials will be investigated for their volume optical storage properties as it applies to Michael E. Thomas' Patents on Non-Contact Photon Induced Electric Field Poling.

Molecular dissociation following Thomas' patents cover methods for a non-contact photon induced electric field poling using UV space charge fields at the same wavelength as a molecular transition will create controllable clouds of electrons (exciton-polaritons) in harmonic waves (Plasmon). Some organic/inorganic molecules have resonant valence orbit electrons that under the proper UV space charge field photo excitation will allow polarized conduction band electrons (polarons) to move freely for a short time (Popular Inversion). Plasmon known as spin polarized electric current (polarons) along with the electric field present provide a mechanism for ferroelectric perovskite molecules central atom to switch geometric positions. The unique concept of resonant absorption excitation by UV/Blue laser light illumination causing molecular dissociation and simultaneous electric field application ( Pockels effect ) can be used for writing 2D Area or 3D volume data so when it is read back having coherent interference waves in a beam of Soliton Wave photon radiation (below popular inversion).

The single frequency below popular inversion creates many bright or dark bands from the UV light birefringence that are in phase or out of phase with one another. The diffraction of the Soliton Wave by the bistable state nucleus in the center of ferroelectric dipole molecule can therefore be represented as a binary 0 or 1 having either positive and/or negative index of refraction.

Method for writing and reading 1 nm to 300 nm data cell sizes is proprietary.


Non – Invasive Optical Spintronic techniques using a non-contact mosfet transistor to retrieve the electron states of the multiferroic ferroelectric molecule will allow for the creation of very dense storage having non-volatility.

When groups of electrons spin in the same direction, i.e. spin up or spin down, the electro static and magnetic fields associated with all the electrons can add up to one large electric and magnetic moment 100 to 1,000 times greater than normal. Methods and functions for controlling electron spin up and spin down are proprietary.

Faraday Effect can therefore be created by vertical movement of the electrons in a rotational field further influenced under an electric field and UV electromagnetic polarized light. Whereby the magnetic fields of the individual electrons fields are parallel at some point along the polarized UV boundary allowing the possibility for directional spin current change of the electrons from spin up to spin down or vice versa.

Electrons have electro magnetic properties whose electron movement is called electric current that can be measured by the abundance of or lack of electrons in the ferroelectric nucleus called voltage or static charge.

Ferroelectric spintronics is the method of using electric fields and UV frequency popular inversion selective optical excitation photons to alter properties of ferroelectrics molecules for data manipulation by changing the internal geometry of ferroelectric atoms and the spin current of its electrons.

The technology concept is to use Polarized UV photons having resonant frequencies of the ferroelectric molecule along with a Non-Contact Nano/Microwave Electric Fields Transducer to control electron movement, electron spin, electron electric field polarity, and electron electro magnetic fields for optical display imagery and data storage applications.

Thomas believes that intraband/outerband resonant absorption by circularly polarized UV photons leads to spin polarization of electrons. Then it is possible to say an "Atomic Quantum Switch" carries electro-static field, electro-magnetic field, and spin orientation that can be made to represent non-volatile atomic data.

New phrases like photon induced electric field poling, plasmonic physics, and ferroelectric spintronics were created to talk about the science.

For ferroelectric spintronics to work there needs to be dynamic current flow to cause movement of the electron which has intrinsic properties effected by electro magnetic fields, electric fields, and photon excitation.

For example, when charge carriers like electrons are accelerated (as opposed to moving at constant velocity), a fluctuating magnetic field is produced. This generates a fluctuating electric field, known as a space charge field, which in turn produces another varying magnetic field.

Generating a perfect spin current by an electric field and UV photons in a high-k dipole dielectric material like a ferroelectrics molecule could then be made reversible, have non-dissipative of power, and not suffer from leakage current lost over time.

It has further been shown in patent 6,046,973 4/4/00 and many animation gifs on the website that ferroelectric molecular write / read activity is influenced by popular inversion / below popular inversion use of ultra-violet / deep blue light according to The Einstein/Planck theorem of Energy Quantum.

That an induced electrical field along with UV photons helps to create spin polarized electron currents that further alters the ferroelectric molecular properties such as conductivity, intrinsic magnetic fields and intrinsic electrical properties.

The electrons in ferroelectric materials can be trapped in 2 or more directions causing the center atom of the dipole molecule to change internal geometric positions. This causes the absorption spectrum of the ferroelectric molecule to change creating absorption bands for the UV/Deep Blue photons during reading (below popular inversion).

These absorption bands by the electronic traps and the refraction by the central atom appear as light and dark patterns. Certain crystals also exhibit a linear electro-optic effect such that the birefringence occurs when it is placed in an electric field and a beam of light is passed through the sample in the direction of the field.

Removal of the light source and induced electric field leave the ferroelectric molecule in an altered electrical state potential which is non-volatile.

Niels Bohr Atom Postulates states, light excited electrons will stay in their higher energy orbits (popular inversion), i.e., UV or deep blue light with specific frequency and quantum energy excite the electrons of ferroelectric molecules into higher valence orbits and fall back to the normal lower energy orbits when the UV or deep blue light source is removed.

The photoexcited conduction electrons carry a pure spin current with in-plane spin polarization due to the Rashba spin-orbit interaction and the spin current induces inward or outward transverse charge spin currents.

The altered molecular state of the ferroelectric molecule can be non-destructively Read by using a second deep blue or ultra-violet light source below popular inversion which prevents the electrons of the ferroelectric perovskite molecule to jump from one orbit to another and back again.

Translating the physics of the electrostatic field (electric lines of force) from the ferroelectric molecule to voltage or data is sensed by the floating gate mosfet transistor.

A Mosfet Nanotransistor that is able to detect small changes in the electrical field potential of the ferroelectric molecule when ultra-violet or deep blue light source is rotated and focused on the ferroelectric perovskite molecule.

The read Mosfet transistor is a source follower that does not destroy the stored electric field/voltage potential difference of the ferroelectric molecule.

The read voltage output is the recorded field strength in the ferroelectric molecule and is equal to the VCC of the floating mosfet transistor plus or minus the detected electrostatic field strength (electric lines of force) of the ferroelectric molecule.

The stored internal dipole position (remnant displacement of central atoms - remnant polarization) further amplifies any higher orbit electron electrical field potential either positive or negative depending on the dipole position in the ferroelectric molecule and the distance from the UV or deep blue integrated read/write head.

The dipole position of the central atom is always in one of two binary positions which dictate whether the ferroelectric molecule, looking from the top down, is a north south positive polarity or a south north negative polarity electric field. The electrons are either in a spin up or spin down rotation.

Removal of the second UV light source (Quantum energy is characterized below popular inversion - not to induce electron movement into the conduction band) leaves the ferroelectric molecule in its initial electrical field stored state. More new definition of terms includes light induced positive electrical fields, normal non-induced electrical field, and light induced negative electrical fields.

The stored electrical field potential of a ferroelectric molecule can be made to represent, at least four electrostatic spintronic field states equal to binary information.

Thomas found that Ultraviolet light was not only important to create free conduction band electrons but that UV is the " Fountain of Youth " for ferroelectric molecules.

He found that the use of UV in ferroelectric applications prevents fatigue and pinning of the Atomic Molecular Dipole.

Thomas discovered this secret not widely known in the use of ferroelectric materials except by a few ferroelectric materials experts like Colossal.

Double sided disk and tape can be produced by separating the ferroelectric molecular coating layer by a plastic, metal, glass, or ceramic substrate.

It should also be noted that one of the main causes of California's last power shortage/outage problems were placed at the feet of the large data storage farms using millions of disk drives to run the internet. Imagine the oil, pollution, equipment, and labor cost savings by using just ONE Colossal disk drive. President Bush says energy and oil dependency cost have to come down in America and alternative sources for saving energy must be identified.

One Multi-Terabyte Colossal Drive could save more than 900,000 watts hour by replacing a thousand or more hard drives each requiring on average 3 amps of continuous power usage. That breaks down into 3A * 5V/12v or 15 watts per minute * 60 = 900 watts an hour. World wide approximate power usage is 900 watts/hour * 500,000,000 drives = 450 x 10^9 watts hour (50,000,000 new drive every year). Power and energy conservation will play an important role in the 21st century as energy dollar resources become critical black outs , brown outs .

2,400 500GB Hard Drives = 1 Petabyte of data storage. Then you will need 9 massive cabinets according to EMC, UPS, software, programmers, maintenance personnel, management, spare parts, and operating budget.

Spintronics Reference Articles :

Fundamentals of Spintronics

Semiconductor Spintronics:Role of the Valence-Band Holes

Transient photocurrents in lead zirconate titanate thin films

Spin Control

Ultafast Manipulation of Electron Spin Coherence

Optical micromanipulation takes hold

Colossal Storage Corp. will jump into high gear in 4th quarter of 2007 now that University of Puerto Rico has secured National Science Foundation and DOE/EPSCOR financial backing for testbed proof of concept of ferroelectric spintronics and other materials concepts leading to new product introductions to the marketplace.

 

 

 

 

 

 

 

 

 

 

 

 

 

 


This Colossal Storage Website (web start date Sept 1, 1999) is constantly being updated with the latest research, press, and breakthrus in Ferroelectrics and other Future Storage nanoTechnologies.

FeDrive and FeHead are the trade names for the integrated semiconductor ferroelectric device concepts of Colossal Storage, Pocomoke City, Md.

Michael E. Thomas wants to License or Sell his U.S. Patents, # 6,028,835 2/22/00 and # 6,046,973 4/4/00 , and USPTO .

This home page contains, lots of useful information such as theoretical ideas, application data, future concepts , and future marketing data and other nanotechnologies under development.

[ CAUTION - General ]

Although the information at this web site (hereinafter called "Information") is provided in good faith and believed to be correct, Colossal Storage and its affiliates referred to at this web site (hereinafter called "Affiliates") make no representations or warranties as to its completeness, accuracy, or timeliness.

This web site and Information are provided to you on an "as is" basis with out any warranty of any kind, and the use of them is at your own risk.

The Information is protected by copyright under the laws of The United States of America and other foreign countries. You may not sell, modify, reproduce, display, distribute, or otherwise use the Information in any way for any public or commercial purpose.

Neither license nor immunity under any patent is granted or implied by public viewing of this website.

Inventions by Michael E. Thomas under U.S. Patents, # 6,028,835 2/22/00 and # 6,046,973 4/4/00 concepts in this home page are for laboratory discussion and possible licensing and sale only.

The specifications are subject to change without notice.